The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Jun. 30, 2022
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Quang Le, San Jose, CA (US);

Brian R. York, San Jose, CA (US);

Cherngye Hwang, San Jose, CA (US);

Xiaoyong Liu, San Jose, CA (US);

Michael A. Gribelyuk, San Jose, CA (US);

Xiaoyu Xu, San Jose, CA (US);

Randy G. Simmons, San Jose, CA (US);

Kuok San Ho, Emerald Hills, CA (US);

Hisashi Takano, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 10/32 (2006.01); C23C 8/12 (2006.01); C30B 29/52 (2006.01); G11B 5/00 (2006.01); G11B 5/39 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H01F 10/324 (2013.01); C23C 8/12 (2013.01); C30B 29/52 (2013.01); G11B 5/3909 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02); G11B 2005/0021 (2013.01); G11B 2005/0024 (2013.01);
Abstract

The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.


Find Patent Forward Citations

Loading…