The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Dec. 11, 2023
Universite D'aix Marseille, Marseilles, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Jean-Michel Portal, Saint-Savournin, FR;
Vincenzo Della Marca, Marseilles, FR;
Jean-Pierre Walder, Marseilles, FR;
Julien Gasquez, Echirolles, FR;
Philippe Boivin, Venelles, FR;
Universite D'Aix Marseille, Marseilles, FR;
Centre National de la Recherche, Paris, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
STMicroelectronics (Rousset) SAS, Roussel, FR;
Abstract
A method for operating a sense amplifier in a one-switch one-resistance (1S1R) memory array, includes: generating a regulated full voltage and a regulated half voltage; applying the regulated full voltage and regulated half voltage to selected and unselected bit lines of the 1S1R memory array during read operations as an applied read voltage; and inducing and compensating for a sneak-path current during read operations by adjusting the applied read voltage based on the cell state of an accessed bit cell and an amplitude of the sneak-path current.