The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Aug. 15, 2023
Applicant:
Zeno Semiconductor, Inc., Sunnyvale, CA (US);
Inventors:
Jin-Woo Han, San Jose, CA (US);
Yuniarto Widjaja, Cupertino, CA (US);
Assignee:
Zeno Semiconducter, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/417 (2006.01); G11C 11/404 (2006.01); G11C 11/4091 (2006.01); G11C 11/412 (2006.01); G11C 15/04 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/417 (2013.01); G11C 11/404 (2013.01); G11C 11/4091 (2013.01); G11C 11/412 (2013.01); G11C 15/04 (2013.01); G11C 15/043 (2013.01); H10B 12/20 (2023.02);
Abstract
A memory cell comprising includes a silicon-on-insulator (SOI) substrate, an electrically floating body transistor fabricated on the silicon-on-insulator (SOI) substrate, and a charge injector region. The floating body transistor is configured to have more than one stable state through an application of a bias on the charge injector region.