The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Apr. 06, 2021
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Thales, Courbevoie, FR;
Stephane Malhouitre, Grenoble, FR;
David Bitauld, Massy, FR;
Karim Hassan, Grenoble, FR;
Joan Ramirez, Bures-sur-Yvette, FR;
Alexandre Shen, Orsay, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
THALES, Courbevoie, FR;
Abstract
A fabricating process may include: producing a trench, in an encapsulated-silicon layer, in the location where a silicon-nitride core of the waveguide must be produced; then depositing a silicon-nitride layer on the encapsulated-silicon layer, the thickness of the deposited silicon-nitride layer being sufficient to completely fill the trench; then removing the silicon nitride situated outside of the trench to uncover an upper face with which the trench filled with silicon nitride is flush; then depositing a dielectric layer that covers the uncovered upper face in order to finalize the encapsulation of the silicon-nitride core and thus to obtain a mixed layer containing both the silicon and silicon-nitride cores encapsulated in dielectric.