The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Apr. 12, 2021
Applicant:

Visera Technologies Company Limited, Hsin-Chu, TW;

Inventors:

Jyun-You Lu, Tianzhong Township, Changhua County, TW;

Hsin-Yen Tsai, Zhudong Township, Hsinchu County, TW;

Hao-Min Chen, Chiayi, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 3/00 (2021.01); G02B 3/00 (2006.01); G03F 1/50 (2012.01); G03F 7/00 (2006.01); H01L 27/142 (2014.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
G02B 3/0012 (2013.01); G03F 7/0007 (2013.01); H01L 27/14627 (2013.01);
Abstract

A method for forming a micro-lens array is provided. According to the method, a substrate is provided, and a hard-mask layer is formed. A lithography process is performed on the hard-mask layer by a hard-mask to form a first pattern and a second pattern. Then, the first pattern and the second pattern are reflowed to form a first lens structure and a second lens structure respectively. The photomask includes a first pattern segment and a second pattern segment, and the second pattern segment includes a transparent region and an opaque region. An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.


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