The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Sep. 28, 2020
Applicant:

Femto Deployments Inc., Okayama, JP;

Inventors:

Akira Watanabe, Okayama, JP;

Tadashi Okuno, Okayama, JP;

Takeji Ueda, Okayama, JP;

Assignee:

FEMTO Deployments Inc., Okayama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/3586 (2014.01); G01N 21/95 (2006.01); G03F 7/40 (2006.01); H01L 21/66 (2006.01); G01N 21/84 (2006.01);
U.S. Cl.
CPC ...
G01N 21/3586 (2013.01); G01N 21/9501 (2013.01); G03F 7/40 (2013.01); H01L 22/10 (2013.01); G01N 2021/8411 (2013.01); G01N 2021/8427 (2013.01); G01N 2201/126 (2013.01);
Abstract

A terahertz-wave signal input unitconfigured to input a terahertz-wave signal from a spectroscopic apparatusfor detecting a terahertz wave acting on a photoresist, and a terahertz-wave signal analysis unitconfigured to analyze a terahertz-wave signal input by the terahertz-wave signal input unitto acquire characteristic information of the photoresist are included, and spectroscopic processing using a terahertz wave is performed on a photoresist to acquire characteristic information of the photoresist (a characteristic value or a correlation characteristic indicating a relationship between a plurality of elements including the characteristic value). Even though the characteristics of the photoresist change depending on the light, since the characteristic change is not caused by the terahertz wave, it is possible to acquire characteristic information of the photoresist without changing the characteristics of the photoresist, and to properly evaluate the characteristics of the photoresist from the characteristic information.


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