The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Mar. 29, 2019
Peking University, Beijing, CN;
PEKING UNIVERSITY, Beijing, CN;
Abstract
The application relates to a strongly-polarized molecule of the following general formula: wherein A denotes a group having a polarizability greater than 2 C·m/V; Rand Rare respectively hydrogen, halogen, a hydroxyl group, an amino group, a cyano group, a nitro group, a carboxyl group, a Calkyl group, a Calkoxy group, a halogenated Calkyl group, a halogenated Calkoxy group, a hydroxyl Calkyl group, a hydroxyl Calkoxy group, or a Calkyl amino group; xand xdenote 0 or an integer no less than 1, respectively; and yand ydenote 0 or an integer no less than 1, respectively. The application further relates to a strongly-polarized molecule-graphene molecule heterojunction, and a single molecule field effect transistor comprising a substrate, a gate, a dielectric layer and the strongly-polarized molecule-graphene molecule heterojunction; and the dielectric layer is located between the gate and the strongly-polarized molecule-graphene molecule heterojunction. The single molecule field effect transistor provided by the application can realize highly-efficient gate modulation.