The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

May. 23, 2023
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Dongsoo Kim, Seoul, KR;

Ji-Hyun Ka, Asan-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/126 (2023.01); G09G 3/3233 (2016.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
H10K 59/126 (2023.02); G09G 3/3233 (2013.01); H10K 59/1213 (2023.02); H10K 59/131 (2023.02); G09G 2310/0262 (2013.01); G09G 2320/045 (2013.01); H01L 27/1225 (2013.01); H01L 29/78672 (2013.01); H01L 29/7869 (2013.01); H10K 59/1201 (2023.02);
Abstract

An organic light emitting display (OLED) device includes an organic light emitting diode having an anode and a cathode. The organic light emitting diode is configured to receive a reference voltage. A control transistor includes a first control electrode and a first semiconductor active layer. The control transistor is configured to receive a control signal. A driving transistor includes a second control electrode that is electrically connected to the control transistor, an input electrode that is configured to receive a power voltage, an output electrode that is electrically connected to the anode of the organic light emitting diode, and a second semiconductor active layer that includes a different material from that of the first semiconductor active layer. A shielding electrode is disposed on the second semiconductor active layer, overlapping the driving transistor, and configured to receive the power voltage.


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