The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2024
Filed:
Nov. 02, 2022
Applicant:
Washington State University, Pullman, WA (US);
Inventors:
Min-Kyu Song, Pullman, WA (US);
Younghwan Cha, Pullman, WA (US);
Assignee:
WASHINGTON STATE UNIVERSITY, Pullman, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/1395 (2010.01); C01B 33/021 (2006.01); C01B 33/06 (2006.01); H01M 4/1393 (2010.01); H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/62 (2006.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 4/1395 (2013.01); C01B 33/021 (2013.01); C01B 33/06 (2013.01); H01M 4/1393 (2013.01); H01M 4/366 (2013.01); H01M 4/386 (2013.01); H01M 4/625 (2013.01); H01M 10/0525 (2013.01);
Abstract
Silicon materials suitable for use as an anode material and associated method of production are disclosed herein. In one embodiment, a silicon material includes crystalline silicon in a matrix and macro-scale pores distributed in the matrix of the crystalline silicon. The macro-scale pores can have a size greater than 100 nanometers, and surfaces of crystalline silicon in the macro-scale pores are coated with carbon.