The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2024
Filed:
Mar. 03, 2022
Fuji Electric Co., Ltd., Kawasaki, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A method of manufacturing a superjunction silicon carbide semiconductor device is provided, enabling a reduction of the number of times a combination of epitaxial growth and ion implantation for forming a parallel pn structure is performed. In the method of manufacturing the superjunction silicon carbide semiconductor device, forming an epitaxial layerof a second conductivity type on a front surface of a silicon carbide semiconductor substrateof a first conductivity type and selectively forming semiconductor regionsof the first conductivity type by implanting nitrogen ions in the epitaxial layer are repeated multiple times, thereby forming the parallel pn structure.