The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Feb. 17, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Masaaki Bairo, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/773 (2023.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H04N 25/773 (2023.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08145 (2013.01);
Abstract

A semiconductor device capable of realizing a capacitative element of which a capacitance value has low bias dependence and of which capacitance density is high without lowering operating voltage is provided. The semiconductor device includes: a semiconductor substrate; a first capacitative element stacked on the semiconductor substrate; and a second capacitative element which is stacked on an opposite side to a side of the semiconductor substrate of the first capacitative element and of which a capacitance value has bias characteristics being opposite to bias characteristics of a capacitance value of the first capacitative element, wherein the first capacitative element and the second capacitative element are connected in parallel.


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