The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Dec. 09, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventor:

Enis Tuncer, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01F 27/32 (2006.01); H01F 27/02 (2006.01); H01F 27/28 (2006.01); H01F 41/04 (2006.01); H01L 23/495 (2006.01); H01L 23/522 (2006.01); H01L 23/58 (2006.01); H01L 25/00 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01F 27/323 (2013.01); H01F 27/022 (2013.01); H01F 27/2804 (2013.01); H01F 41/043 (2013.01); H01L 23/49575 (2013.01); H01L 23/5227 (2013.01); H01L 23/58 (2013.01); H01L 25/50 (2013.01); H01F 2027/2809 (2013.01); H01L 23/49555 (2013.01); H01L 25/18 (2013.01);
Abstract

A magnetic assembly includes a multilevel lamination or metallization structure with a core dielectric layer, dielectric stack layers, a high permittivity dielectric layer, and first and second patterned conductive features, the dielectric stack layers having a first relative permittivity, the high permittivity dielectric layer extends between and contacting the first patterned conductive feature and one of the dielectric stack layers or the core dielectric layer, the high permittivity dielectric layer has a second relative permittivity, and the second relative permittivity is at least 1.5 times the first relative permittivity to mitigate dielectric breakdown in isolation products.


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