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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12169773 B1

PDFFull Text
Date of Patent:
Dec. 17, 2024

Filed:

Sep. 21, 2021

Optoelectronic synaptic memristor

Applicant:

Beihang University, Beijing, CN;

Inventors:

Anping Huang, Beijing, CN;

Yuhang Ji, Beijing, CN;

Qin Gao, Beijing, CN;

Mei Wang, Beijing, CN;

Zhisong Xiao, Beijing, CN;

Assignee:

BEIHANG UNIVERSITY, BeiJing, CN;

Attorney:
Primary Examiner:

Sitaramarao S Yechuri

Int. Cl.
CPC ...
G06N 3/067 (2006.01); H01L 29/06 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
G06N 3/0675 (2013.01); H01L 29/0673 (2013.01); H01L 31/035218 (2013.01); H01L 31/035227 (2013.01);
Abstract

An optoelectronic synaptic memristor includes: a bottom electrode layer, a porous structure layer modified with quantum dots, a two-dimensional material layer, a transparent top electrode layer, and a waveguide layer, which are arranged in sequence from top to bottom, wherein the waveguide is ridge shaped for light conduction, comprising a wedge-shaped output terminal, wherein: through the wedge-shaped output terminal of the waveguide, light is vertically injected into the two-dimensional material layer and the porous structure layer modified with the quantum dots. By integrating the waveguide and the optoelectronic memristor, the present invention obtains the highly controlled characteristics with high alignment and confinement for light effect on the device and has advantages in realizing optoelectronic synergy in the optoelectronic synaptic memristors. The present invention has strong controllability and excellent performance and can be widely used in high-density integration of storage and computing, artificial synapses, artificial intelligence, etc.

Find Patent Forward Citations

Huang, Anping. (2024). Optoelectronic synaptic memristor (U.S. Patent No. 12169773). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12169773

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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