The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Mar. 21, 2019
Applicant:

Soitec, Bernin, FR;

Inventors:

Djamel Belhachemi, Saint Martin d'Heres, FR;

Thierry Barge, Chevrieres, FR;

Assignee:

SOITEC, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 30/057 (2023.01); H03H 3/02 (2006.01); H10N 30/073 (2023.01);
U.S. Cl.
CPC ...
H10N 30/057 (2023.02); H03H 3/02 (2013.01); H10N 30/073 (2023.02); H03H 2003/025 (2013.01);
Abstract

A method for transferring a piezoelectric layer onto a support substrate comprises: —providing a donor substrate including a heterostructure comprising a piezoelectric substrate bonded to a handling substrate, and a polymerized adhesive layer at the interface between the piezoelectric substrate and the handling substrate, —forming a weakened zone in the piezoelectric substrate, so as to delimit the piezoelectric layer to be transferred, —providing the support substrate, —forming a dielectric layer on a main face of the support substrate and/or of the piezoelectric substrate, —bonding the donor substrate to the support substrate, the dielectric layer being at the bonding interface, and—fracturing and separating the donor substrate along the weakened zone at a temperature below or equal to 300° C.


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