Three-dimensional semiconductor memory devices, methods of manufacturing the same, and electronic systems including the same

Abstract

Disclosed are three-dimensional semiconductor memory devices, methods of manufacturing the same, and electronic systems including the same. The device includes a peripheral circuit structure on a substrate, and a cell array structure including a stack structure that includes gate electrodes on the peripheral circuit structure, a first source conductive pattern on the stack structure, and vertical channel structures in vertical channel holes that penetrate the stack structure and the first source conductive pattern. The vertical channel structure includes a data storage pattern on a sidewall of the vertical channel hole, a vertical semiconductor pattern on the data storage pattern, and a second source conductive pattern on the vertical semiconductor pattern and surrounded by the data storage pattern. A thickness of the data storage pattern between the first source conductive pattern and the second source conductive pattern is greater than it is between the stack structure and the vertical semiconductor pattern.