The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Apr. 06, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Hyejin Kim, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 1/03 (2006.01); B32B 27/08 (2006.01); B32B 27/20 (2006.01); B32B 27/38 (2006.01); H05K 1/02 (2006.01); H05K 1/11 (2006.01);
U.S. Cl.
CPC ...
H05K 1/036 (2013.01); B32B 27/08 (2013.01); B32B 27/20 (2013.01); B32B 27/38 (2013.01); H05K 1/0298 (2013.01); H05K 1/0373 (2013.01); H05K 1/115 (2013.01); B32B 2307/206 (2013.01); B32B 2307/538 (2013.01); B32B 2457/08 (2013.01);
Abstract

An insulation structure includes: a first resin layer including first fillers; a second resin layer on the first resin layer and including second fillers; and a third resin layer on the second resin layer and including third fillers. A diameter of each of the first fillers may be more than about 200 nm and equal to or less than about 500 nm. A diameter of each of the second fillers may be more than about 10 nm and equal to or less than about 200 nm. A diameter of each of the third fillers may be equal to or less than about 10 nm. An arithmetic average roughness (Ra) and a ten point average roughness (Rz) of a surface of the insulation structure may be equal to or less than about 30 nm and equal to or less than about 100 nm, respectively.


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