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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12166149 B1

PDFFull Text
Date of Patent:
Dec. 10, 2024

Filed:

Nov. 20, 2019

Light-emitting diode with electrodes on a single face and process of producing the same

Applicant:

Aledia, Echirolles, FR;

Inventors:

Ivan-Christophe Robin, Grenoble, FR;

Xavier Hugon, Teche, FR;

Philippe Gilet, Teche, FR;

Tiphaine Dupont, Grenoble, FR;

Assignee:

ALEDIA, Echirolles, FR;

Attorney:

HAUPTMAN HAM, LLP

Primary Examiner:

Ajay Arora

Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01L 33/50 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 25/0753 (2013.01); H01L 33/007 (2013.01); H01L 33/105 (2013.01); H01L 33/50 (2013.01); H01L 33/0095 (2013.01); H01L 33/325 (2013.01);
Abstract

A light-emitting diodeincludes a first region, for example of the P type, formed in a first layerand forming, in a direction normal to a basal plane, a stack with a second regionhaving at least one quantum well formed in a second layer, and including a third region, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions, through the first and second layers. A process for producing a light-emitting diodein which the third regionis formed by implantation into and through the first and second layers

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