The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Jan. 26, 2024
Zhejiang Jinko Solar Co., Ltd., Zhejiang, CN;
Jinko Solar Co., Ltd., Jiangxi, CN;
Zhao Wang, Zhejiang, CN;
Jie Yang, Zhejiang, CN;
Peiting Zheng, Zhejiang, CN;
Xinyu Zhang, Zhejiang, CN;
Mengchao Shen, Zhejiang, CN;
Jie Mao, Zhejiang, CN;
Jiajia Zhu, Zhejiang, CN;
Jingming Zheng, Zhejiang, CN;
ZHEJIANG JINKO SOLAR CO., LTD., Haining Zhejiang, CN;
JINKO SOLAR CO., LTD., Jiangxi, CN;
Abstract
A solar cell is provided, including a substrate having a rear surface including P-type regions and N-type regions, first dielectric layers each formed over a N-type region, first doped polysilicon layers each formed on a first dielectric layer and doped with an N-type doping element, second dielectric layers each formed over a P-type region, second doped polysilicon layers each formed on a second dielectric layer and doped with a P-type doping element, a passivation layer formed over surfaces of the first and second doped polysilicon layers, and first and second electrodes penetrating the passivation layer. Each first electrode is electrically connected to a first doped polysilicon layer and each second electrode is electrically connected to a second doped polysilicon layer. A first roughness of a surface of a first doped polysilicon layer is greater than a second roughness of a surface of a second doped polysilicon layer.