The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Feb. 25, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
A semiconductor device includes a drain electrode, a first source electrode, a second source electrode, a first gate electrode, and a second gate electrode. The first gate electrode is arranged between the first source electrode and the drain electrode. The first gate electrode extends along a first direction. The second gate electrode is arranged between the second source electrode and the drain electrode. The second gate electrode extends along the first direction. The first gate electrode is arranged above a first imaginary line substantially perpendicular to the first direction in a top view of the semiconductor device and the second gate electrode is arranged below a second imaginary line substantially perpendicular to the first direction in the top view of the semiconductor device.