The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Aug. 10, 2021
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Yasunori Tateno, Osaka, JP;

Fuminori Mitsuhashi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/76 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7606 (2013.01); H01L 21/02378 (2013.01); H01L 21/02444 (2013.01); H01L 21/02527 (2013.01); H01L 29/1606 (2013.01); H01L 29/4236 (2013.01); H01L 29/66045 (2013.01); H01L 29/78684 (2013.01); H01L 29/78687 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes a graphene film disposed on a substrate and formed of atomic layers of graphene that are stacked, a source electrode and a drain electrode disposed on the graphene film, and a gate electrode disposed on the graphene film between the source electrode and the drain electrode with a gate insulator film interposed between the gate electrode and the graphene film, wherein a first number of the atomic layers of the graphene film in a source region where the source electrode is located and a drain region where the drain electrode is located is greater than a second number of the atomic layers of the graphene film in a channel region where the gate electrode is located.


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