The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Jun. 18, 2020
Dynex Semiconductor Limited, Lincolnshire, GB;
Zhuzhou Crrc Times Semiconductor Co. Ltd., Hunan, CN;
Luther-King Ekonde Ngwendson, Lincolnshire, GB;
Ian Deviny, Lincolnshire, GB;
DYNEX SEMICONDUCTOR LIMITED, Lincolnshire, GB;
ZHUZHOU CRRC TIMES SEMICONDUCTOR CO. LTD., Hunan, CN;
Abstract
We herein describe a semiconductor device comprising a first element portion formed on a substrate, the first element portion being an operating region of an insulated gate bipolar transistor (IGBT) and a second element portion formed on the substrate, the second element portion being an operating region of a diode. The first element portion comprises a first collector region of a second conductivity type, a drift region of a first conductivity type located over the first collector region, and formed by the semiconductor substrate, a first body region of a first conductivity type located over the drift region, a second body region of a second conductivity type located over the drift region, at least one first contact region of a first conductivity type located above the second body region and having a higher doping concentration compared to the first body region, at least one second contact region of a second conductivity type located laterally adjacent to the at least one first contact region, the at least one second contact region having a higher doping concentration than the second body region, a first plurality of trenches extending from a surface through the second body region of a second conductivity type into the drift region wherein the at least one first contact region adjoins at least one of the plurality of trenches so that, in use, a channel region is formed along said at least one trench of the first plurality of trenches and within the body region of a second conductivity type. A first trench of the first plurality of trenches is laterally spaced from a second trench of the first plurality of trenches by a first distance. The second element portion comprises a second collector region of a second conductivity type, the drift region of a first conductivity type located over the second collector region, a third body region of a second conductivity type located over the drift region, a second plurality of trenches extending from a surface through the third body region into the drift region. A first trench of the second plurality of trenches is laterally spaced from a second trench of the second plurality of trenches by a second distance, and the first distance is larger than the second distance. The semiconductor device further comprises a first terminal contact, wherein the first terminal contact is electrically connected to the at least one first contact region of a first conductivity type and the body region of a second conductivity type and a second terminal contact, wherein the second terminal contact is electrically connected to the first collector region and the second collector region.