The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Mar. 29, 2022
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Aravind Appaswamy, Plano, TX (US);
Jofin Joseph Vadakkeparasseril, Bangalore, IN;
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/42304 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01); H01L 29/1008 (2013.01);
Abstract
A semiconductor device is described herein. The semiconductor device includes a substrate and a collector region in the substrate. The semiconductor device also includes a plurality of emitter regions in the substrate, each of the plurality emitter regions separate from each other, wherein the plurality of emitter regions is disposed in an area bounded by the collector region.
Appaswamy, Aravind. (2024). Repeated emitter design for achieving scalable lateral pnp behavior (U.S. Patent No. 12166077). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12166077
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile