The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Oct. 11, 2023
Applicant:

Silicon Motion, Inc., Hsinchu County, TW;

Inventor:

Tsung-Chieh Yang, Hsinchu, TW;

Assignee:

Silicon Motion, Inc., Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/10 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 29/02 (2006.01); G11C 29/52 (2006.01); H03M 13/11 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 11/1012 (2013.01); G11C 11/5642 (2013.01); G11C 16/26 (2013.01); G11C 29/028 (2013.01); G11C 29/52 (2013.01); H03M 13/1102 (2013.01); G11C 2029/0411 (2013.01);
Abstract

An exemplary method for reading data stored in a flash memory includes: selecting an initial gate voltage combination from a plurality of predetermined gate voltage combination options; controlling a plurality of memory units in the flash memory according to the initial gate voltage combination, and reading a plurality of bit sequences; performing a codeword error correction upon the plurality of bit sequences, and determining if the codeword error correction successful; if the codeword error correction is not successful, determining an electric charge distribution parameter; determining a target gate voltage combination corresponding to the electric charge distribution parameter by using a look-up table; and controlling the plurality of memory units to read a plurality of updated bit sequences according to the target gate voltage combination.


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