The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Sep. 29, 2021
Applicant:
Korea University Research and Business Foundation, Seoul, KR;
Inventors:
Young Keun Kim, Seoul, KR;
Taehyun Kim, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/80 (2023.02);
Abstract
Disclosed are a spin-orbit torque (SOT)-based magnetic tunnel junction and a method of fabricating the same. More particularly, the SOT-based magnetic tunnel junction includes a spin-orbit torque (SOT)-based magnetic tunnel junction, including: a spin-orbit active layer formed on the substrate; a free layer formed on the spin-orbit active layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer, wherein the spin-orbit active layer includes a W—X alloy (where W is tungsten and X includes at least one of group IV semiconductors and group III-V semiconductors).