The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Jul. 26, 2019
Sumitomo Chemical Company, Limited, Tokyo, JP;
Giovanni Ferrara, Tsukuba, JP;
Takahiro Seike, Tsukuba, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
This light detecting element has a reduced dark current and improved external quantum efficiency. The light detecting element includes a positive electrode, a negative electrode, and an active layer that is provided between said positive electrode and said negative electrode, and that contains a p-type semiconductor material and an n-type semiconductor material. The thickness of the active layer is at least 800 nm. The value obtained by subtracting the absolute value of the LUMO of the n-type semiconductor material from the work function of the surface in contact with the negative electrode side surface of the active layer is 0.0 to 0.5 eV. The absolute value of the LUMO of the n-type semiconductor material is 2.0 to 10.0 eV.