The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Mar. 11, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Masayoshi Iwayama, Seoul, KR;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); G11C 11/16 (2006.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/00 (2023.02); G11C 11/161 (2013.01); H10N 50/80 (2023.02); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10N 50/01 (2023.02);
Abstract

According to one embodiment, a magnetic memory device includes a memory cell including a magnetoresistance effect element, a switching element, and a resistance element connected in series. The resistance element has an asymmetric current-voltage characteristic, and when data is read from the memory cell, a first voltage in a reverse direction is applied to the resistance element, and a resistance value of the resistance element at a time when the first voltage is applied is greater than a resistance value of the resistance element at a time when a second voltage in a forward direction having an absolute value identical to an absolute value of the first voltage is applied.


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