The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Nov. 17, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Haemin Lee, Seoul, KR;
Jongsoo Kim, Seoul, KR;
Hyeonjoo Song, Suwon-si, KR;
Juyeon Jung, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device comprises a stack structure including interlayer insulating layers and gate layers alternately stacked on a lower structure; and a memory vertical structure, separation structures, and support vertical structures penetrating the stack structure, wherein the gate layers include a lower gate layer, an upper gate layer, and intermediate gate layers, wherein the separation structures include a first separation structure, wherein the support vertical structures include a first inner support vertical structure penetrating the lower gate layer, the intermediate gate layers, and the upper gate layer, and adjacent to the first separation structure, wherein a portion of the first inner support vertical structure is directly connected to the first separation structure on the same level as the upper gate layer, and wherein a portion of the first inner support vertical structure is spaced apart from the first separation structure on the same level as the lower gate layer.