The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Jan. 31, 2022
Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Baker Scott, San Jose, CA (US);

George Maxim, Saratoga, CA (US);

Marcus Granger-Jones, Scotts Valley, CA (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/30 (2006.01); H03F 1/02 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H03F 3/245 (2013.01); H03F 1/0222 (2013.01); H03F 1/56 (2013.01); H03F 3/195 (2013.01); H03F 3/45179 (2013.01); H03F 2200/451 (2013.01);
Abstract

A driving amplifier with low output impedance is disclosed. In one aspect, a driving amplifier stage that does not need an inter-stage impedance matching network between the driving amplifier stage and an output amplifier stage in a transmission chain may be achieved by providing stacking transconductance devices within the driving amplifier stage and reusing a supply current to provide an intermediate signal with high current but moderated voltage swing to drive the output amplifier stage. In specifically contemplated aspects, the stacked transconductance devices may be complementary metal oxide semiconductor (CMOS) field effect transistors (FETs).


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