The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Apr. 20, 2021
Applicant:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Inventor:
Kenichi Shimamoto, Kyoto, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/21 (2006.01); H01L 23/66 (2006.01); H03F 1/02 (2006.01); H03F 1/56 (2006.01);
U.S. Cl.
CPC ...
H03F 3/211 (2013.01); H01L 23/66 (2013.01); H03F 1/0211 (2013.01); H01L 2223/6655 (2013.01); H03F 1/56 (2013.01); H03F 2200/222 (2013.01); H03F 2200/451 (2013.01);
Abstract
A power amplifier includes a first transistor, a second transistor, and a third transistor that are formed on a semiconductor substrate, and a bump that is electrically connected to an emitter of the first transistor and that is provided so as to, when the semiconductor substrate is viewed in plan, overlay a first disposition region where the first transistor is disposed, a second disposition region where the second transistor is disposed, and a third disposition region where the third transistor is disposed.