The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Mar. 21, 2022
Applicant:

Enevate Corporation, Irvine, CA (US);

Inventors:

Hong Zhao, Aliso Viejo, CA (US);

Benjamin Yong Park, Mission Viejo, CA (US);

Assignee:

Enevate Corporation, Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/134 (2010.01); G01R 31/392 (2019.01); H01M 4/38 (2006.01); H01M 10/42 (2006.01); H01M 10/44 (2006.01);
U.S. Cl.
CPC ...
H01M 4/134 (2013.01); G01R 31/392 (2019.01); H01M 4/386 (2013.01); H01M 10/425 (2013.01); H01M 10/44 (2013.01); H01M 2010/4271 (2013.01);
Abstract

Systems and methods are provided for managing operation of silicon-dominant electrode cells. Polarization in a silicon-dominant cell during charge/discharge cycles may be assessed, with the polarization being assessed, at least in part, based on one or both of charge rate and discharge rate. One or more adjustments may be determined based on the assessing of polarization, and the one or more adjustments may be applied to operation of the silicon-dominant cell. The one or more adjustments configured to compensate for at least some of the effects of polarization in the silicon-dominant cell.


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