The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Jul. 07, 2023
Applicant:

Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;

Inventors:

Feng Wang, Xiamen, CN;

Zhanggen Xia, Xiamen, CN;

Yu Zhan, Xiamen, CN;

En-song Nie, Xiamen, CN;

Anhe He, Xiamen, CN;

Kang-Wei Peng, Xiamen, CN;

Su-Hui Lin, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 25/0753 (2013.01); H01L 33/0095 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light-emitting diode (LED) includes a light-transmissive substrate having a first surface, an epitaxial structure disposed on the first surface, an insulation structure, and first and second electrodes. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The insulation structure includes a first insulation layer covering the side wall and the upper surface, and a second insulation layer covering a portion of the first surface that is exposed from the epitaxial structure and the first insulation layer. The first insulation layer is formed with first and second holes through which the first and second electrodes are electrically connected to the epitaxial structure. The second insulation layer is formed with an opening. The insulation structure is made of at least one material selected from silicon oxide, silicon nitride, magnesium fluoride, AlO, TiOand TiO.


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