The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Aug. 30, 2021
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Koichi Kokubun, Yokohama Kanagawa, JP;
Nobu Matsumoto, Ebina Kanagawa, JP;
Mitsuhiro Sengoku, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); G01S 7/4863 (2020.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/146 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01); H01L 29/417 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 31/107 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); G01S 7/4863 (2013.01); H01L 27/14627 (2013.01); H01L 27/14643 (2013.01);
Abstract
A light detector according to one embodiment includes a substrate, a plurality of avalanche photodiodes, a well region, and a microlens array. The plurality of avalanche photodiodes are provided above the substrate. Each of the avalanche photodiodes is surrounded by a trench portion among a plurality of trench portions. The well region is provided between the trench portions that are adjacent to each other. The well region includes at least one of a transistor and a diode. The microlens array is provided to cover the avalanche photodiodes.