The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Feb. 05, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a transistor and a diode formed at a common semiconductor substrate. The diode region includes: a fifth semiconductor layer of a second conductivity type; a second semiconductor layer of the second conductivity type provided on the fifth semiconductor layer; a third semiconductor layer of a first conductivity type provided closer to a first main surface of the semiconductor substrate; a sixth semiconductor layer of the first conductivity type provided on the third semiconductor layer; and a lifetime control layer formed of a crystal defect layer reaching a deeper position than an intermediate position of the second semiconductor layer between an end of the third semiconductor layer in a thickness direction as viewed from the first main surface and an end of the fifth semiconductor layer in a thickness direction as viewed from a second main surface.