The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Apr. 20, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Munhyeon Kim, Hwaseong-si, KR;
Doyoung Choi, Hwaseong-si, KR;
Daewon Ha, Seoul, KR;
Mingyu Kim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes an active pattern on a substrate, a plurality of source/drain patterns in a first direction on the active pattern, a first channel structure between a pair of source/drain patterns, a second channel structure between another pair of source/drain patterns, a first gate electrode extending in a second direction perpendicular to the first direction, and a second gate electrode intersecting the second channel structure and extending in the second direction. The first gate electrode includes a first portion between a bottom surface of the first channel structure and a top surface of the active pattern, and the second gate electrode includes a first portion between a bottom surface of the second channel structure and the top surface of the active pattern. A thickness of the first portion of the second gate electrode is greater than a thickness of the first portion of the first gate electrode.