The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Oct. 22, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
Qingyuan He, Suzhou, CN;
Ronghui Hao, Suzhou, CN;
Fu Chen, Suzhou, CN;
Jinhan Zhang, Suzhou, CN;
King Yuen Wong, Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
A nitride-based semiconductor device including a first and a second nitride-based semiconductor layers, a source electrode and a drain electrode, and a gate structure. The gate structure includes at least one conductive layer and two or more doped nitride-based semiconductor layers. The at least one conductive layer includes metal, and is in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The two or more doped nitride-based semiconductor layers are in contact with the second nitride-based semiconductor layer and abut against the conductive layer, so as to form contact interfaces abutting against the metal-semiconductor junction with the second nitride-based semiconductor.