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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12159911 B1

PDFFull Text
Date of Patent:
Dec. 03, 2024

Filed:

Dec. 16, 2021

Semiconductor including active contact buried portions

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Gyeom Kim, Hwaseong-si, KR;

Jinbum Kim, Seoul, KR;

Dongwoo Kim, Incheon, KR;

Dongsuk Shin, Suwon-si, KR;

Sangmoon Lee, Suwon-si, KR;

Seung Hun Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 21/0259 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/7848 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes a substrate including an active pattern, a channel pattern and a source/drain pattern on the active pattern, a gate electrode provided on the channel pattern and extended in a first direction, and an active contact coupled to the source/drain pattern. The active contact includes a buried portion buried in the source/drain pattern and a contact portion on the buried portion. The buried portion includes an expansion portion provided in a lower portion of the source/drain pattern and a vertical extension portion connecting the contact portion to the expansion portion.

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