The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
May. 18, 2020
Robert Bosch Gmbh, Stuttgart, DE;
Alberto Martinez-Limia, Tuebingen, DE;
Jan-Hendrik Alsmeier, Pfullingen, DE;
Klaus Heyers, Reutlingen, DE;
Stephan Schwaiger, Bodelshausen, DE;
Wolfgang Feiler, Reutlingen, DE;
ROBERT BOSCH GMBH, Stuttgart, DE;
Abstract
A power transistor cell including a layer arrangement, which includes a front side and a rear side, the front side being situated opposite the rear side. A trench extends starting from, and perpendicular to, the front side along a first direction into the layer arrangement. The trench extends at least into a current-spreading layer, and expands along a second direction, which is situated perpendicularly to the first direction. Field shielding areas are situated at least partially in the current-spreading layer, wherein source areas and field shielding contacting areas are situated alternatingly along the second direction. One portion each of the body areas is situated between each source area and each field shielding contacting area. The field shielding contacting areas connect the field shielding areas to first metal areas on the front side. The field shielding contacting areas make contact at least partially with side faces of the trench.