The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Mar. 17, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jimin Choi, Seoul, KR;

Jeonil Lee, Suwon-si, KR;

Jongmin Lee, Hwaseong-si, KR;

Juik Lee, Anyang-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/367 (2006.01); H01L 23/42 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/367 (2013.01); H01L 23/42 (2013.01); H01L 23/481 (2013.01);
Abstract

A thermal pad of a semiconductor chip, a semiconductor chip including the thermal pad, and a method of manufacturing the semiconductor chip, the thermal pad including a thermal core in a trench at a lower surface of a semiconductor substrate, the thermal core being configured to receive heat generated from a through silicon via (TSV) vertically extending through the semiconductor substrate; a thermal head connected to the thermal core and protruding from the lower surface of the semiconductor substrate, the thermal head being configured to dissipate the heat in the thermal core; a first insulation layer between an inner surface of the trench and the thermal core; and a second insulation layer between the first insulation layer and the thermal core.


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