The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Dec. 27, 2023
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Paul Frank, Finkenstein am Faaker See, AT;
Thomas Heinelt, Dresden, DE;
Oliver Schilling, Warstein, DE;
Sven Schmidbauer, Dresden, DE;
Frank Wagner, Ruethen, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/37001 (2013.01);
Abstract
A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.