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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12159832 B1

PDFFull Text
Date of Patent:
Dec. 03, 2024

Filed:

Jan. 21, 2022

Integrated circuit device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dawoon Choi, Hwaseong-si, KR;

Myungsoo Noh, Hwaseong-si, KR;

Noyoung Chung, Hwaseong-si, KR;

Sunghun Jung, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Herve-Louis Y Assouman

Int. Cl.
CPC ...
H01L 29/786 (2006.01); B82Y 10/00 (2011.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 29/0665 (2013.01); H01L 29/41733 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01);
Abstract

An integrated circuit (IC) device includes a fin-type active region extending in a first lateral direction on a device region of a substrate. A gate line extends in a second lateral direction on the fin-type active region. The second lateral direction intersects with the first lateral direction. A source/drain region is adjacent to one side of the gate line on the fin-type active region. A gate contact is on the gate line and connected to the gate line. A source/drain contact is on the source/drain region and includes a first segment facing the gate contact and a second segment integrally connected to the first segment. The second segment extends from the first segment in the second lateral direction. In the first lateral direction, a first distance from the first segment to the gate line is greater than a second distance from the second segment to the gate line.

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