The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Oct. 23, 2023
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Kentaro Nasu, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49527 (2013.01); H01L 23/3107 (2013.01); H01L 23/3121 (2013.01); H01L 23/49513 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/24 (2013.01); H01L 24/25 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 24/82 (2013.01); H01L 24/92 (2013.01); H01L 25/074 (2013.01); H01L 23/3135 (2013.01); H01L 24/29 (2013.01); H01L 24/30 (2013.01); H01L 24/32 (2013.01); H01L 2224/24175 (2013.01); H01L 2224/244 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/30505 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/3315 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/82101 (2013.01); H01L 2224/82106 (2013.01); H01L 2224/92244 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/15162 (2013.01);
Abstract

The semiconductor device includes first and second semiconductor elements. Each element has an obverse surface and a reverse surface, with a first electrode arranged on the reverse surface, and with a second electrode arranged on the obverse surface. The semiconductor device further includes: a first lead having an obverse surface and a reverse surface; an insulating layer covering the first lead, the first semiconductor element and the second semiconductor element; a first electrode connected to the second electrode of the first semiconductor element; and a second electrode connected to the first lead. The first semiconductor element and the first lead are bonded to each other with the reverse surface of the first semiconductor element facing the lead obverse surface. The second semiconductor element and the first lead are bonded to each other with the reverse surface of the second semiconductor element facing the lead reverse surface.


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