The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Mar. 23, 2022
Nanya Technology Corporation, New Taipei, TW;
Wei-Chen Pan, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present application discloses a method for fabricating a semiconductor device. The method includes: providing a photomask comprising an opaque layer on a mask substrate and surrounding a translucent layer on the mask substrate; providing a device stack comprising a first dielectric layer on a substrate, a first etch stop layer on the first dielectric layer, and a second dielectric layer on the first etch stop layer; forming a pre-process mask layer on the device stack; patterning the pre-process mask layer using the photomask to form a patterned mask layer comprising a mask region corresponding to the opaque layer, a trench region corresponding to the translucent layer, and a via hole corresponding to the mask opening of via feature. The method also includes performing a damascene etching process to form a via opening in the first dielectric layer and a trench opening in the second dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile