The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Nov. 10, 2022
Applicant:

China University of Geosciences, Wuhan, Wuhan, CN;

Inventors:

Xiangyun Hu, Wuhan, CN;

Guoshu Huang, Wuhan, CN;

Jianchao Cai, Wuhan, CN;

Jian Yang, Wuhan, CN;

Huolin Ma, Wuhan, CN;

Wenlong Zhou, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01V 11/00 (2006.01); E21B 49/00 (2006.01);
U.S. Cl.
CPC ...
G01V 11/002 (2013.01); E21B 49/00 (2013.01);
Abstract

A method for predicting a deep geothermal field based on a temperature, pressure, and resistivity coupling constraint includes: equally dividing logging resistivity-overburden pressure-temperature data of m boreholes in a study area into N formations on a depth basis, and normalizing resistivity in each formation; deducing an accurate relationship characterization between a normalized resistivity, a temperature and a pressure in different formations of different formations; inverting an electromagnetic data volume in the study area to obtain a resistivity distribution characteristic, equally dividing an inverted resistivity into M formations, and normalizing the inverted resistivity into a normalized inverted resistivity; inverting a density distribution based on gravity observation data, and converting the density distribution into an overburden pressure; and calculating a distribution characteristic of a deep underground temperature field based on the accurate relationship characterization in different formations, the normalized inverted resistivity, and the overburden pressure.


Find Patent Forward Citations

Loading…