Drain-gate voltage excitation and source-drain current acquisition system and method for gas-sensitive organic field effect transistors

Abstract

The present disclosure provides a drain-gate voltage excitation and source-drain current acquisition system and method for gas-sensitive organic field effect transistors (OFETs). The system includes an acquisition device and a gas-sensitive OFET array. The device includes a microcontroller module, a power supply management module, a voltage excitation module, a voltage regulation module, a transimpedance amplifier (TIA) module, a fully-differential low-side current detection module, a voltage acquisition module, a signal transmission module and an array switching module. In the present disclosure, the real-time monitoring of various harmful gases and the performance testing of the gas-sensitive OFETs are realized. The device has two current detection modes, thereby not only stabilizing drain electric potentials, but also enabling drain-source currents to be measured with sufficient accuracy.