The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Oct. 15, 2018
Applicant:

The Trustees of Columbia University IN the City of New York, New York, NY (US);

Inventors:

James S. Im, New York, NY (US);

Wenkai Pan, New York, NY (US);

Ruobing Song, New York, NY (US);

Insung Choi, Busan, KR;

Vernon Wong, Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/06 (2014.01); B23K 26/0622 (2014.01); B23K 26/066 (2014.01); B23K 26/082 (2014.01); B23K 26/352 (2014.01);
U.S. Cl.
CPC ...
B23K 26/355 (2018.08); B23K 26/0622 (2015.10); B23K 26/066 (2015.10); B23K 26/0821 (2015.10);
Abstract

Methods and systems for crystallizing a thin film provide an optics system configured to produce a laser spot beam directed towards the thin film and truncate the laser spot beam before the laser spot beam comes into contact with the thin film. The truncated laser spot beam is continually translated in a first direction while irradiating an amorphous silicon area of the thin film to generate a molten zone in the irradiated amorphous silicon area, where the thin film cools and solidifies to form crystal grains.


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