The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Mar. 16, 2022
Applicant:
Ablic Inc., Tokyo, JP;
Inventor:
Takaaki Hioka, Tokyo, JP;
Assignee:
ABLIC Inc., Nagano, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 52/00 (2023.01); G01R 33/07 (2006.01); H10N 52/01 (2023.01);
U.S. Cl.
CPC ...
H10N 52/101 (2023.02); G01R 33/077 (2013.01); H10N 52/01 (2023.02);
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type, and a vertical Hall element provided on the semiconductor substrate. The vertical Hall element includes an impurity diffusion layer of a second conductivity type and three or more electrodes. The impurity diffusion layer is provided on the semiconductor substrate and has an impurity concentration which increases as a depth increases. The three or more electrodes are provided in a straight line on a surface of the impurity diffusion layer and are composed of an impurity region of the second conductivity type having a higher concentration than the impurity diffusion layer.