The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Aug. 03, 2023
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Pooria Mostafalu, Penfield, NY (US);

Frederick Brady, Webster, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 25/702 (2023.01); H01L 27/146 (2006.01); H04N 25/75 (2023.01);
U.S. Cl.
CPC ...
H04N 25/702 (2023.01); H01L 27/14605 (2013.01); H04N 25/75 (2023.01); H01L 27/14643 (2013.01);
Abstract

An imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. The isolation structure may be in the form of a full thickness dielectric trench isolation structure.


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