Method for forming bulk acoustic wave resonance device

Abstract

A method for forming a bulk acoustic wave resonance device is provided, includes: forming a first stack, and said forming the first stack includes providing a first substrate; forming a piezoelectric layer on the first substrate; forming a first electrode layer on the piezoelectric layer; forming a cavity preprocessing layer on the piezoelectric layer, and a cavity is to be formed based on the cavity preprocessing layer, the cavity preprocessing layer at least covers a first end of the first electrode layer, and the cavity preprocessing layer is in contact with the piezoelectric layer, a first side of the first stack corresponds to a side of the first substrate, and a second side of the first stack corresponds to a side of the cavity preprocessing layer; forming a second stack, and said forming the second stack includes providing a second substrate; joining the first stack and the second stack, and the second stack is disposed at the second side; removing the first substrate, and the first side corresponds to a side of the piezoelectric layer; forming a second electrode layer at the first side, and the second electrode layer is in contact with the piezoelectric layer; and removing the second stack.