The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Jul. 28, 2020
Omron Corporation, Kyoto, JP;
Masaki Yawata, Kyoto, JP;
Chihiro Miyahara, Kyoto, JP;
OMRON CORPORATION, Kyoto, JP;
Abstract
A drive circuit includes a GaN FET having a source connected to an anode of an LD and a drain connected to a power source of the LD, a gate drive having an output port connected to a gate of the GaN FET and a negative voltage port connected to the source of the GaN FET to receive an input voltage at a positive voltage port and output the input voltage from the output port in response to a signal with a predetermined level, a capacitor between the positive and negative voltage ports of the gate drive, a diode on a power source line connecting the positive voltage port of the gate drive and a VDD power source for outputting a voltage less than the breakdown voltage at a voltage Vgs of the GaN FET, and a semiconductor switch between the source of the GaN FET and the ground.