The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Feb. 15, 2022
Applicant:

Excellence Opto. Inc., Miaoli County, TW;

Inventors:

Fu-Bang Chen, Miaoli County, TW;

Kuo-Hsin Huang, Miaoli County, TW;

Assignee:

EXCELLENCE OPTO. INC., Hsinchu Science Park, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/30 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 33/0008 (2013.01); H01L 33/14 (2013.01); H01L 33/305 (2013.01); H01L 33/325 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01);
Abstract

Disclosed is a small-size vertical-type light emitting diode chip with high luminous in a central region. A PN junction structure is arranged on a light emitting region base of an interface structure, the interface structure is provided with a P-type Ohmic contact area at the light emitting region base, a central area of the PN junction structure is above the P-type Ohmic contact area, an insulating layer is formed on an extending platform adjacent to the light emitting region base and extends to cover an N-type semiconductor of the PN junction structure to form a border covering region surrounding the N-type semiconductor, an N-type Ohmic contact electrode covers the border covering region, and an N-type electrode pad is arranged on the insulating layer and electrically connected with the N-type Ohmic contact electrode via a bridging connected metal layer.


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